, o ne. 20 stern ave. springfield, new jersey 07081 u.s.a. description ? with to-220 package ? complement to type d44c series ? very low collector saturation voltage ? fast switching applications ? designed for various specific and general purpose application ? shunt and switching regulators ? low and high frequency inverters converters and etc. pinning pin i description emitter collectoi ^connected to mounting base base telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 d45c series b c e .i simplified outline (to-220) and symbol absolute maximum ratings (ta=25c) symbol vcbo vceo vebo ic i cm ib pd tj tstg parameter d45c1.2.3 d45c4.5.6 d45c7.8.9 D45C10.1i.12 d45c 1.2.3 d45c4.5.6 d45c7.8.9 D45C10.11. 12 emitter-base voltage collector current (dc) collector current -peak base current (dc) total power dissipation junction temperature storage temperature conditions open emitter open base value -40 -55 -70 -90 -30 -45 -60 -80 open collector -5 tc=25t -4 -6 . | 30 150 -55-150 unit v v v a a a w '(1 '(_ quality semi-conductors
silicon pnp power transistors d45c series characteristics tj=25 c unless otherwise specified symbol vcesat veesat ices iebo hpe-1 hfe-2 fr parameter collector-emitter saturation voltage d45c2.3.5.6.8.9.11.12 d45c 1.4.7. 10 base-emitter saturation voltage collector cut-off current emitter cut-off current dc current gain dc current gain d45c2 35689 11.12 d45c1.4.7.10 d45c1. 4.7.10 d45c2.5.8.11 conditions lc=-1a :lb-50ma ic=.1a:ib-0.1a ic-1a:ib-0.1a vce=rated vces veb^5v: lc=0 lc=-0.2a:vce^1v lc=-1a:vce^1v d45c3.6.9.12 ic=-2a : vce-1v transition frequency lc=-20ma:vce-4v: f= 1.0mhz min 40 25 10 20 20 typ. 40 max -0.5 -1.3 -100 -10 120 unit v v m a m a mhz switching times tr ts tf rise time storage time fall time lc=-1.0a;vcc=-20v |b1=-|b2=-0.1a 0.2 0.6 0.3 p s m s n s
silicon pnp power transistors d45c series package outline 1000 8.76 28c 000 3.75 * 3c 13.00 045 <& 30.00'- ? -, ?.: ze 3? 1 20 5ch 508 2.60 1 300*001 a a . -: . oo'' fig.2 outline dimensions {unindicated tolerance: f 0.10 mm}
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